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Deep RIE: Page 1 of 2
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

Deep RIE

Deep reactive ion etching is used to etch deep cavities in substrates with relatively high aspect ratio. Most systems systems utilize the so-called "Bosch process", in which a fluor polymer is used to passivate the etching of the sidewalls. Typical aspect ratios of 10-20 can be achieved.
Process
Advanced silicon dioxide etch (AOE) with photolithography
Silicon DRIE with photolithography (Unaxis VLR 700)
Silicon DRIE with photolithography (PlasmaTherm 770)
Deep RIE (Bosch process)
Deep RIE (Bosch process) with photolithography
Silicon DRIE
Silicon DRIE with anti-footing SOI
Silicon DRIE
Advanced oxide etch
Silicon DRIE (Bosch Process)
Silicon DRIE (Bosch Process) Plasma Therm 770
Silicon DRIE - No Lag (Etch rate independent of feature size)
silicon DRIE (Bosch Process)
Silicon DRIE
Silicon RIE (smooth sidewalls)
Silicon deep RIE
Silicon oxide dry etch
Advanced Oxide Etch (STS-AOE)
Silicon DRIE (Bosch Process)
Deep RIE (Bosch process)
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