Silicon DRIE with anti-footing SOI : View

on front Silicon DRIE with anti-footing SOI

on front

1 Contact photolithography (Shipley 220)

1.1 Dehydration bake

1.2 HMDS prime

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1.3 Photoresist coat (Shipley 220)

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1.4 Photoresist softbake

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1.5 Contact front-front alignment

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1.6 Contact G-line exposure

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1.7 Photoresist develop (Shipley 220)

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2 Silicon DRIE with anti-footing SOI option

Material	silicon

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3 Microscope inspection

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 100 µm

Perform handle wafer mounting

If mounting of device wafers on handle wafers is necessary for processing, select yes here.

Perform photolithography

Please select one of photolithography options listed here.

Perform stylus profilometry

Optional metrology step for depth <300um.
One measurement per wafer.

Aspect ratio 20

Batch size 1

Etch rate 2 µm/min

Etchant

Solutions and their concentrations.

Bosch process

Mask materials

Materials that can be used to mask etching.

silicon dioxide, OCG 825 35CS, Arch OiR 897-10i, silicon nitride

Material silicon

Min feature size 4 µm

Sides processed either

Wafer holder

Device that holds the wafers during processing.

electrostatic chuck

Wafer size

Comments:

Low frequency bias, pulsed etch.

Attachments

profile_before_device_etch_silicon_wafer_.tif (768.6 KB, image/tiff): Last test on standard test wafer. Following tests were made on SOI wafer /wafer: test poly 2/
profile_before_device_etch_1_SOI_wafer_.tif (768.6 KB, image/tiff): last SOI test measuring point 1 /wafer: test SOI 1/
profile_before_device_etch_2_SOI_wafer_.tif (768.6 KB, image/tiff): last SOI test measuring point 2 /wafer: test SOI 1/
profile_before_device_etch_3_SOI_wafer_.tif (768.6 KB, image/tiff): last SOI test measuring point 3 /wafer: test SOI 1/