on front Advanced silicon dioxide etch (AOE) with photolithography |
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| Process characteristics: |
| Alignment tolerance Registration of CAD data to features on wafer |
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| Alignment type Method used to align materials to be bonded. |
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| Depth Depth of material removed by etch process |
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| Material |
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| Min feature size |
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| Perform edge bead removal |
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| Perform microscope inspection |
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| Perform sem sample analysis |
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| Perform stylus profilometry |
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| Resist thickness |
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| Aspect ratio |
15 |
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| Etch rate |
0.1 .. 0.5 µm/min |
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| Mask materials Materials that can be used to mask etching. |
AZ 9245, AZ 5214e |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 2, silicon dioxide: 1 |
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| Wafer size |
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| Comments: |
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| Attachments |
![[Thumbnail]](file/57310777436735/thumbnail?50) 10um resist 10um etch.JPG (50.6 KB, image/jpeg)- 10um deep etch.
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