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Advanced oxide etch: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Advanced oxide etch
Process characteristics:
Depth
Depth*
must be 0.5 .. 30 µm
0.5 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Material
Material*
Etch rate 0.1 .. 0.5 µm/min
Etch type dry anisotropic
Sides processed either
Wafer size
Wafer size
Equipment STS -AOE
Equipment characteristics:
Batch sizes 100 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), Pyrex (Corning 7740), quartz (fused silica)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm
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