Deep RIE (Bosch process): View

on front Deep RIE (Bosch process)

on front

1 Deep RIE (Bosch process)

Material	silicon

on front

2 Resist ash

Material	photoresist (category)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 550 µm

Perform handle wafer mounting

Select "yes" if the etch will go through the wafer.

Etch rate

1 µm/min

Etchant

Solutions and their concentrations.

Bosch process

Material

silicon

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 75, silicon dioxide: 150, silicon: 1

Sides processed

either

Wafer size

Comments:

This module should be used with a proper masking layer.