Deep RIE (Bosch process): View

on front Deep RIE (Bosch process)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 550 µm

Perform handle wafer mounting

Aspect ratio

Batch size

Edge profile

Free form text field for description of edge profile

Anisotropic

Etch rate

1 µm/min

Etchant

Solutions and their concentrations.

Bosch process

Material

silicon

Min feature size

0.8 µm

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 75, silicon dioxide: 150, silicon: 1

Sides processed

either

Temperature

45 °C

Wafer size

Equipment

STS Deep RIE

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

helium clamp

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 2000 µm

Comments:

Etch rate depends on feature
size -- ranges from 0.3 .. 4
um/min.; 1 um/min. is average.
If etching all the way through
wafer, may need to bond wafer
to another wafer:
approximately 1 hour.
Minimum feature size depends
on resist thickness.
Gold contaminated wafers not
allowed.