Silicon DRIE - No Lag (Etch rate independent of feature size): View

on front Silicon DRIE - No Lag (Etch rate independent of feature size)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 100 µm

Aspect ratio

Batch size

Etch rate

2 µm/min

Material

silicon

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

AZ 9245: 80, silicon dioxide: 150, silicon: 1

Sides processed

either

Temperature

25 °C

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon on insulator

Wafer size

Equipment

Unaxis VLR 700 Bosch Chamber

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

1-flat

Wafer holder

Device that holds the wafers during processing.

cassette

Wafer thickness

List or range of wafer thicknesses the tool can accept

250 .. 800 µm