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Silicon DRIE: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Silicon DRIE
on back
1 Resist bonding (Shipley 1827)
MaterialShipley 1827Resist thickness2.7 µm
1.1 Dehydration bake
on back
1.2 HMDS prime (manual)
MaterialHMDS
on back
1.3 Photoresist coat (spoke pattern Shipley 1827)
MaterialShipley 1827Thickness2.7 µm
1.4 Resist bond
1.5 Photoresist hardbake (110 degC)
on front
2 Silicon DRIE
Materialsilicon
on front
3 Optical surface profilometry
Thickness0.001 .. 5000 µm
on front
4 Microscope inspection
5 De-mounting handle wafer
Materialphotoresist (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Perform sem resist bonding
Perform sem resist bonding*
yes no
Perform strip
Perform strip*
yes no
Batch size 1
Etch rate 3.25 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Material silicon
Sides processed either
Wafer size
Wafer size
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