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Deep RIE (Bosch process) with photolithography: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Deep RIE (Bosch process) with photolithography
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Etch rate 1 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Material silicon
Min feature size 5 µm
Resist thickness 7 µm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size
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