Silicon DRIE: View

on front Silicon DRIE

on front

1 Contact photolithography (Shipley 220)

1.1 Dehydration bake

1.2 HMDS prime

on front

1.3 Photoresist coat (Shipley 220)

on front

1.4 Photoresist softbake

on front

1.5 Contact front-front alignment

on front

1.6 Contact G-line exposure

on front

1.7 Photoresist develop (Shipley 220)

on front

2 Silicon DRIE with anti-footing SOI option

Material	silicon

on front

3 Microscope inspection

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 525 µm

Perform handle wafer mounting

If mounting of device wafers on handle wafers is necessary for processing, select yes here.

Perform photolithography

Please select one of photolithography options listed here.

Perform stylus profilometry

Optional metrology step for depth <300um.
One measurement per wafer.

Aspect ratio

Batch size

Etch rate

2 µm/min

Etchant

Solutions and their concentrations.

Bosch process

Mask materials

Materials that can be used to mask etching.

OCG 825 35CS, Arch OiR 897-10i, silicon dioxide, silicon nitride

Material

silicon

Min feature size

4 µm

Sides processed

either

Wafer holder

Device that holds the wafers during processing.

electrostatic chuck

Wafer size

Comments:

The handle wafer processing steps will be included automatically, if the etch depth is >300um, but they can be also included by request (please use the field entitled "perform handle wafer mounting")
Please contact us for additional metrology steps.