on front Silicon DRIE with photolithography (PlasmaTherm 770) |
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| Process characteristics: |
| Alignment tolerance Registration of CAD data to features on wafer |
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| Alignment type Method used to align materials to be bonded. |
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| Depth Depth of material removed by etch process |
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| Min feature size |
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| Perform edge bead removal |
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| Perform handle wafer mounting If mounting of device wafers on handle wafers is necessary for processing, select yes here. |
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| Perform microscope inspection Based on 30 mins of standard inspection per wafer. Please specify devices or features of interest in process instructions. |
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| Perform sem sample analysis Based on 30 mins of standard inspection per wafer. |
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| Perform stylus profilometry One measurement per wafer |
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| Resist thickness A specific photoresist material will be automatically selected by the software based on the thickness value selected here. |
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| Aspect ratio |
15 |
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| Etch rate |
4 µm/min |
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| Etchant Solutions and their concentrations. |
Bosch process |
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| Mask materials Materials that can be used to mask etching. |
AZ 9245, AZ 5214e |
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| Material |
silicon |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 75, silicon dioxide: 150, silicon: 1 |
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| Sides processed |
either |
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| Wafer size |
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