on front Silicon DRIE (Bosch Process) Plasma Therm 770 |
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| Process characteristics: |
| Depth |
|
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| Aspect ratio |
15 |
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| Etch rate |
2 µm/min |
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| Gas |
SF6, C4F8, Argon, O2 |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
AZ 5214: 75, silicon dioxide: 150, silicon: 1 |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
Plasma Therm 770 Silicon DRIE (Bosch Process) |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1, 75 mm: 1 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
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| Wafer holder Device that holds the wafers during processing. |
electrostatic chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |
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