silicon DRIE (Bosch Process): View

on front silicon DRIE (Bosch Process)

Process characteristics:

Depth

1 .. 700 µm

Etch rate

0.5 .. 4 µm/min

Gas

O2, N2, Ar, SF6, C4H8

Material

silicon

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 60, silicon dioxide: 150

Sides processed

either

Uniformity

-0.1 .. 0.1

Wafer size

Equipment

STS DRIE

Equipment characteristics:

Batch sizes

150 mm: 1

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon carbide

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

For thru etches, please check for additional steps.