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LPCVD: Page 1 of 4
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

LPCVD

Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on both sides of the substrate at the same time.
Process
LTO LPCVD
Multipoly Recipe #1
Multipoly Recipe #2
P-doped polysilicon LPCVD
PSG LPCVD
Silicon nitride LPCVD
Undoped polysilicon LPCVD
Low Stress silicon nitride LPCVD (<300 MPa)
Silicon dioxide (TEOS) LPCVD
Stoichiometric silicon nitride LPCVD
Undoped polysilicon LPCVD
Low Stress silicon nitride LPCVD (200 MPa)
Stoichiometric silicon nitride LPCVD
Super low stress silicon nitride LPCVD (50 MPa)
LTO LPCVD
Low-stress silicon nitride LPCVD ( <120 MPa)
Low-stress silicon nitride LPCVD ( <200 MPa)
PSG LPCVD
Stoichiometric silicon nitride LPCVD
Undoped polysilicon LPCVD
Results Page:  1 2 3 4