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PSG LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
PSG LPCVD
1 Pre-LPCVD clean
1.1 4:1 Sulfuric/peroxide bath
1.2 HCl bath
1.3 50:1 HF dip
on front
2 PSG LPCVD
Materialphosphosilicate glass
on front
3 Spectrophotometric film thickness measurement #1
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material phosphosilicate glass
Wafer size
Wafer size
Comments:
  • Wafers must be cleaned differently if they have metal or silicides.
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