Multipoly Recipe #2: View

on front Multipoly Recipe #2

1 RCA clean with HF Dip (Pre-furnace clean)

1.1 RCA clean

1.2 HF Dip

2 Multipoly process: Recipe #2

Material	polysilicon	Residual stress	29 MPa	Thickness	3.12 µm

on front

3 Spectrophotometric film thickness measurement

Thickness	20 .. 5000 nm

Process characteristics:

Perform clean

Excluded materials

gold (category), copper

Material

polysilicon

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Thickness

3.12 µm

Wafer size

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.