logo
Register or Sign in

Low-stress silicon nitride LPCVD ( <200 MPa): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Low-stress silicon nitride LPCVD ( <200 MPa)
1 Pre-LPCVD clean
1.1 4:1 Sulfuric/peroxide bath
1.2 HCl bath
1.3 50:1 HF dip
2 Low-stress silicon nitride LPCVD ( <200 MPa)
Materialsilicon nitrideRefractive index2.1 .. 2.3Residual stress150 .. 200 MPa
on front
3 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material silicon nitride
Refractive index 2.1 .. 2.3
Residual stress 150 .. 200 MPa
Temperature 850 °C
Wafer size
Wafer size
  Contact us    Search    Comment on this page