Low Stress silicon nitride LPCVD (<300 MPa): View

MEMS and Nanotechnology Exchange

Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Low Stress silicon nitride LPCVD (<300 MPa)

1 RCA1 clean

2 HF dip

3 Low Stress silicon nitride LPCVD (300 MPa)

Allowed materials	silicon, silicon nitride, polysilicon, silicon dioxide	Refractive index	2.2	Temperature	810 °C
Deposition rate	31 Å/min	Residual stress	200 .. 300 MPa	Uniformity	0.05

4 Spectrophotometric film thickness measurement

Process characteristics:

Thickness

0.05 .. 1 µm

Material

silicon nitride

Wafer size