Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Stoichiometric silicon nitride LPCVD
  1 RCA clean with HF dip
  2 Stoichiometric silicon nitride LPCVD
  3 Spectrophotometric film thickness measurement
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 0.475 µm
0.1 .. 0.475 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon nitride
Sides processed both
Wafer size
Wafer size