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Sputtering: Page 1 of 4
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

Sputtering

The substrate is placed in a vacuum chamber with a target of the material to be deposited. A plasma is generated in a passive source gas (ie. Argon) in the chamber, and the ion bombardment is directed towards the target, causing material to be sputtered off the target and condense on the chamber walls and the substrate. A strong magnetic field (magnetron) can be used to concentrate the plasma near the target to increase the deposition rate.
Process
Sputter deposition (CVC)
Sputter deposition (Varian)
Aluminum DC-magnetron sputtering (high power)
Aluminum DC-magnetron sputtering (low power)
Aluminum/silicon/copper DC-magnetron sputtering (high power)
Aluminum/silicon/copper DC-magnetron sputtering (low power)
Chromium DC-magnetron sputtering (high power)
Chromium DC-magnetron sputtering (low power)
Nickel DC-magnetron sputtering (high power)
Nickel DC-magnetron sputtering (low power)
Nickel/chromium DC-magnetron sputtering (high power)
Nickel/chromium DC-magnetron sputtering (low power)
Titanium/nickel DC-magnetron sputtering
Al/2% Si DC-magnetron sputtering
Titanium DC-magnetron sputtering
Tungsten DC-magnetron sputtering
Zinc oxide (ZnO) RF-magnetron sputtering
Al sputtering (Metron)
Aluminum Nitride (AlN) Sputter Deposition
Copper DC sputtering
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