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Sputter deposition (CVC): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Sputter deposition (CVC)
Process characteristics:
Adhesion layer material
Adhesion layer material*
Adhesion layer thickness
If no adhesion layer will be used, enter 0 for this field.
Adhesion layer thickness*
If no adhesion layer will be used, enter 0 for this field. , must be 0 .. 50 nm
0 .. 50 nm
Material
Material*
Perform sheet resistance measurement
One measurement per batch on a monitor wafer
Perform sheet resistance measurement*
yes no
One measurement per batch on a monitor wafer
Thickness
Thickness ranges:
Al: 0 .. 1.0 um
Au: 0 .. 0.2 um
Ti: 0 .. 0.1 um
Thickness*
Thickness ranges: Al: 0 .. 1.0 um Au: 0 .. 0.2 um Ti: 0 .. 0.1 um, must be 0.1 .. 5 µm
0.1 .. 5 µm
Wafer size
Wafer size
Comments:
  • One measurement per batch.
    A monitor wafer will be used for the thickness metrology.
  • Allowed thickness ranges: (please contact for thicker depositions)
  • Al: 0 .. 1.0 um
  • Au: 0 .. 0.2 um
  • Ti: 0 .. 0.1 um
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