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Chromium DC-magnetron sputtering (high power): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Chromium DC-magnetron sputtering (high power)
MaterialchromiumResidual stress93 MPa
Depth100 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Excluded materials gold (category), copper
Material chromium
Wafer size
Wafer size
Comments:
  • Film thickness measurements are performed by stylus profilometry. A separate, partially-masked substrate is loaded along with each wafer and is used to measure the thickness of the as-deposited film.
Extra terms