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P-doped polysilicon LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  P-doped polysilicon LPCVD
  1 RCA clean with HF Dip (Pre-furnace clean)
  1.1 RCA clean
  1.2 HF Dip
  2 Phosphorus-doped polysilicon LPCVD
Materialpolysilicon (n-type)
  
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3 Spectrophotometric film thickness measurement
Thickness20 .. 5000 nm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Excluded materials gold (category), copper
Material polysilicon (n-type)
Wafer size
Wafer size
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
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