P-doped polysilicon LPCVD: View

on front P-doped polysilicon LPCVD

1 RCA clean with HF Dip (Pre-furnace clean)

1.1 RCA clean

1.2 HF Dip

2 Phosphorus-doped polysilicon LPCVD

Material	polysilicon (n-type)

on front

3 Spectrophotometric film thickness measurement

Thickness	20 .. 5000 nm

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 5 µm

Excluded materials

gold (category), copper

Material

polysilicon (n-type)

Wafer size

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.