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Diffusion: Page 1 of 1
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
   Diffusion
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Etch
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Thermal
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Diffusion

The substrate is placed in a high temperature furnace (up to ~1200 degC) with a source of the diffusion material. The source can be solid or a gas introduced in the furnace. Solid sources can be separate substrates or doped films pre-deposited on the substrate to be diffused. The diffusion depth and concentration is determined by the diffusion temperature and time.
Process
Phosphorus diffusion (POCl3)
Boron diffusion
POCl diffusion
Deep boron diffusion (Double-sided)
Deep boron diffusion (Single sided)
Deep boron diffusion
Deep boron diffusion with drive-in
Phosphorus diffusion with drive-in
Boron diffusion
Phosphorus diffusion (POCl3)
Boron diffusion and anneal
Phosphorus diffusion and anneal
Boron pre-diffusion
Phosphorus diffusion
Boron pre-deposition
Phosphorus pre-deposition
Diffusion