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Boron diffusion: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
   Diffusion
   Ion implantation
Etch
LIGA
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If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Boron diffusion
1 Pre-diffusion clean
1.1 4:1 Sulfuric/peroxide bath
1.2 50:1 HF dip
1.3 HCl bath
2 Boron pre-diffusion
Materialboron
3 50:1 HF dip
4 Nitrogen anneal
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5 Sheet resistance measurement
Process characteristics:
Anneal duration
Anneal duration*
must be 0 .. 24 hour
0 .. 24 hour
Anneal temperature
Anneal temperature*
must be 950 .. 1100 °C
950 .. 1100 °C
Dopant concentration
Number of atoms per meter cubed
Dopant concentration*
Number of atoms per meter cubed, must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Doping temperature
Doping temperature*
must be 800 .. 1100 °C
800 .. 1100 °C
Doping time
Doping time*
must be 0.1 .. 8 hour
0.1 .. 8 hour
Wafer size
Wafer size
Comments:
  • Oxide removal (HF dip) may be done after annealing at user's choice.
  • Process is uncharacterized; doping profile is determined by user-specified temperatures and times.
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