Boron pre-diffusion: View

Boron pre-diffusion

Process characteristics:

Dopant concentration

Number of atoms per meter cubed

0 .. 1e+20 atom/cc

Doping time

0 .. 1000 min

Temperature

Maximum temperature the substrate reaches during a process

800 .. 1100 °C

Ambient

Ambient to which substrate is exposed during processing

nitrogen, oxygen

Batch size

Material

boron

Sides processed

both

Wafer size

Equipment

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

no-flat, 1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm

Comments:

Wafers should have never had metal or silicide on them.
Wafers should go through a complete pre-diffusion clean at the diffusion wet bench within one hour before loading them into the furnace.