Boron pre-deposition: View

Boron pre-deposition

Process characteristics:

Concentration

0 .. 4e+20 atom/cc

Diffusion depth

0 .. 15 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen

Batch size

Film grown

Material grown during a process

borophosphosilicate glass

Material

boron

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

900 .. 1175 °C

Wafer size

Equipment

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

silicon carbide boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

500 .. 850 µm

Comments:

Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
Maximum depth of deep diffusion is 15 um.
"Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
Expect up to 30% loss of wafers for each run.
Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.