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Phosphorus diffusion (POCl3): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
   Diffusion
   Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Phosphorus diffusion (POCl3)
Process characteristics:
Perform clean
Perform clean*
yes no
Sheet resistance
Sheet resistance*
must be 10 .. 100 Ω/square
10 .. 100 Ω/square
Anneal duration 60 min
Anneal temperature 1000 °C
Wafer size
Wafer size