Phosphorus diffusion (POCl3) |
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| Process characteristics: |
| Sheet resistance Desired sheet resistance |
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| Ambient Ambient to which substrate is exposed during processing |
phosphoryl chloride, nitrogen |
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| Film grown Material grown during a process |
silicon dioxide |
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| Growth rate Rate at which film grows (linear approximation) |
0.03 nm/min |
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| Process duration |
0.5 .. 3 hour |
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| Sides processed |
both |
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| Temperature |
900 .. 1100 °C |
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| Wafer size |
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| Equipment |
FNA3 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
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| MOS clean |
yes |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
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