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Deep boron diffusion: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
   Diffusion
   Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Deep boron diffusion
2.2 HF dip
Materialboron
Materialsilicon dioxide
Process characteristics:
Concentration
Concentration*
must be 0 .. 4e+20 atom/cc
0 .. 4e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 15 µm
0 .. 15 µm
Wafer size
Wafer size