on front Phosphorus diffusion and anneal |
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|
| Process characteristics: |
| Diffusion depth |
|
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| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
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| Dopant concentration Number of atoms per meter cubed |
8e+19 atom/cc |
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| Excluded materials |
gold (category), copper |
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| Film grown Material grown during a process |
phosphosilicate glass |
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| Growth rate Rate at which film grows (linear approximation) |
0.25 nm/min |
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| Material |
phosphorus |
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| Pressure Pressure of process chamber during processing |
1 atm |
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| Sides processed |
either |
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| Temperature |
975 °C |
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| Wafer size |
|
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| Equipment |
Tystar Phosphorus diffusion furnace |
| Equipment characteristics: |
| Batch sizes |
100 mm: 50, 150 mm: 50 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
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| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
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