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Deep boron diffusion (Double-sided): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
   Diffusion
   Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
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Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Deep boron diffusion (Double-sided)
1 Piranha/HF clean
1.1 Piranha clean (MOS-clean)
1.2 10:1 HF dip
2 Boron diffusion
Materialboron
3 Wet oxidation
4 Buffered HF etch (5:1)
on front
5 Sheet resistance measurement
Process characteristics:
Concentration
Concentration*
must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 14 µm
0 .. 14 µm
Batch sizes 100 mm: 12, 150 mm: 6
Excluded materials gold
Process both sides yes
Wafer size
Wafer size
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