Phosphorus pre-deposition: View

Phosphorus pre-deposition

Process characteristics:

Concentration

0 .. 7e+20 atom/cc

Diffusion depth

0 .. 15 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen

Batch size

Film grown

Material grown during a process

phosphosilicate glass

Material

phosphoryl chloride

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

950 °C

Wafer size

Equipment

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 530 µm

Comments:

Furnace capable of phosphorus diffusions using a POCl3 containing liquid source.
Maximum depth of diffusion is 15 um but can be exceeded.
"Diffusion depth" is the depth at which phosphorus concentration equals the user-requested concentration value.