Deep boron diffusion with drive-in: View

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Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Diffusion
Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
DUV Lithography
Deep boron diffusion
Hot Embossing
LIGA
Maskless lithography
Microwave bonding
Shape memory alloy deposition
Silicon-germanium processes
Supercritical dry
Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Deep boron diffusion with drive-in

1 Piranha clean

2 Pre-furnace clean

3 Boron pre-deposition

Material	boron

4 Boron drive-in

Material	silicon dioxide

Process characteristics:

Concentration

Other concentrations are possible but may require characterization

Diffusion depth

Other depths are possible but may require characterization

Batch size

24

Wafer size

Comments:

Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
Maximum depth of deep diffusion is 15 um.
"Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
Expect up to 30% loss of wafers for each run.
Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.
Other concentrations and diffusion depths may be requested, but will require characterization at additional cost.