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POCl diffusion: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
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If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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POCl diffusion
Materialphosphoryl chloride
Process characteristics:
Anneal duration
Anneal duration*
must be 0 .. 1440 min
0 .. 1440 min
Anneal temperature
Anneal temperature*
must be 950 .. 1100 °C
950 .. 1100 °C
Perform clean
Perform clean*
yes no
Wafer size
Wafer size
Comments:
  • Oxide removal (HF dip) may be done after annealing at user's choice.