MVD of Anti-Stiction Coating (DDMS): View

MVD of Anti-Stiction Coating (DDMS)

Process characteristics:

Perform O2 plasma surface prep

This is a default, 5-min-long, in-situ O2 clean with 80 sccm O2 @ 200 watts.

Material

DDMS

Sides processed

both

Temperature

35 °C

Thickness

3 .. 10 Å

Wafer size

Equipment

Equipment characteristics:

Batch sizes

10 .. 150 mm: 1

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

fused silica, Borofloat (Schott), Pyrex (Corning 7740), silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1000 µm

Comments:

DDMS: dimethyldichlorosilane
DDMS CAS# = [75-78-5]
This process includes an in-situ O2 clean prior to the deposition by default. If you do not wish to use the O2 clean please unselect the "perform O2 surface prep" option above.
The O2 clean procedure is 5mins long with 80 sccm O2 / 200 watts.
Uniform contact angle not assured if plasma clean not selected.
The standard process with O2 clean gives a water contact angle of SiO2 after coating = 101 degrees.