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Titanium/nickel DC-magnetron sputter: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Titanium/nickel DC-magnetron sputter
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
argon
Batch size 1
Deposition rate
Rate at which material is added to a wafer
1 µm/hour
Excluded materials gold (category), copper
Material titanium/nickel
Microstructure martensite
Sides processed either
Temperature 430 °C
Wafer size
Wafer size
Equipment DVI Discovery-18
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 10000 µm
Comments:
  • TiNi (50:50)
Extra terms