Stoichiometric silicon nitride LPCVD: View

Stoichiometric silicon nitride LPCVD

Process characteristics:

Thickness

Thickness of material to be deposited.

0.02 .. 0.5 µm

Deposition rate

Rate at which material is added to a wafer

35 Å/min

Material

silicon nitride

Residual stress

900 MPa

Sides processed

both

Temperature

800 °C

Uniformity

0.025

Wafer size

Equipment

Equipment characteristics:

Batch sizes

150 mm: 25

MOS clean

yes

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 675 µm