logo
Silicon nitride PECVD (PlasmaTherm 790): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Silicon nitride PECVD (PlasmaTherm 790)
Process characteristics:
Perform RTA
Perform RTA*
yes no
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology*
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.5 µm
0 .. 0.5 µm
Material silicon nitride
Wafer size
Wafer size