logo
Ebeam evaporation (CHA): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Ebeam evaporation (CHA)
Process characteristics:
Adhesion layer material
Adhesion layer material*
Adhesion layer thickness
If no adhesion layer will be used, enter 0 for this field.
Adhesion layer thickness*
If no adhesion layer will be used, enter 0 for this field. , must be 0 .. 50 nm
0 .. 50 nm
Material
Material*
Perform sheet resistance measurement
One measurement per batch on a monitor wafer
Perform sheet resistance measurement*
yes no
One measurement per batch on a monitor wafer
Thickness
Allowed thickness ranges:
Ag: 0 .. 0.5um
Al: 0 .. 0.2um
Au: 0 .. 1um
Cr: 0 .. 0.5um
Ge: 0 .. 0.025um
Ni: 0 .. 1um
Si: 0 .. 0.050um
Pt: 0 .. 0.1um
Ti: 0 .. 0.1um
Thickness*
Allowed thickness ranges: Ag: 0 .. 0.5um Al: 0 .. 0.2um Au: 0 .. 1um Cr: 0 .. 0.5um Ge: 0 .. 0.025um Ni: 0 .. 1um Si: 0 .. 0.050um Pt: 0 .. 0.1um Ti: 0 .. 0.1um , must be 0 .. 1 µm
0 .. 1 µm
Wafer size
Wafer size
Comments:
  • Metrology includes only one measurement on a monitor wafer per batch.
  • Allowed thickness ranges: (please contact for thicker depositions)
  • Ag: 0 .. 0.5um
  • Al: 0 .. 0.2um
  • Au: 0 .. 1um
  • Cr: 0 .. 0.5um
  • Ge: 0 .. 0.025um
  • Ni: 0 .. 1um
  • Si: 0 .. 0.05um
  • Pt: 0 .. 0.1um
  • Ti: 0 .. 0.1um