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E-beam Evaporation (Pt): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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E-beam Evaporation (Pt)
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 100 .. 1500 Å
100 .. 1500 Å
Material platinum
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Evaporator
Equipment characteristics:
Batch sizes 100 mm: 8, 150 mm: 4
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm