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Maskless photolithography (front-front align) (Shipley 220): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Maskless photolithography (front-front align) (Shipley 220)
on front
1 Photoresist coat (Shipley 220)
MaterialShipley 220
2 Photoresist softbake II
on front
3 Maskless Alignment
on front
4 Maskless Exposure
5 Post-exposure bake
6 Photoresist develop (Shipley 220)
MaterialShipley 220
on front
7 Microscope inspection
Process characteristics:
Resist thickness
Thickness of photoresist.
Resist thickness
Thickness of photoresist. , must be 10 .. 80 µm
10 .. 80 µm
Batch size 1
Material Shipley 220
Sides processed either
Wafer size
Wafer size
Comments:
  • $100.00 setup fee.
  • Minimum of 4 wafers.
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