Silicon dioxide VLR700 PECVD: View

on front Silicon dioxide VLR700 PECVD

Process characteristics:

Thickness

0.01 .. 2 µm

Deposition rate

Rate at which material is added to a wafer

270 Å/min

Gas

5% Silane, Nitrous oxide, Helium

Material

silicon dioxide

Microstructure

amorphous

Pressure

Pressure of process chamber during processing

900 mTorr

Refractive index

1.45

Residual stress

-250 MPa

Sides processed

either

Temperature

250 °C

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 25

Wafer geometry

Types of wafers this equipment can accept

1-flat

Wafer holder

Device that holds the wafers during processing.

cassette

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 700 µm