Silicon-On-Glass MEMS (SOG-MEMS): View

Silicon-On-Glass MEMS (SOG-MEMS)

Bonding Method

Wafer bonding method to be used

Anodic bonding (Si to Pyrex)

Design area

Active design area per chip site in a multi-user project runs

15 mm x 15 mm

Device layer material silicon

Device layer resistivity 1 .. 20 Ω*cm

Device layer thickness 100 µm

Die count

Number of fabricated dies per chip site

Substrate material Pyrex (Corning 7740)

Comments:

The silicon on glass (SOG) module has been developed to integrate CMOS and high-aspect ratio MEMS sensors and actuators. This is accomplished by forming recesses on a glass wafer, anodically bonding a silicon wafer to that glass wafer, and using deep reactive ion etching to etch MEMS devices through the backside of the silicon wafer over the glass recess.
This process is primarily for capacitive sensors and actuators because the MEMS structures are fabricated by deep reactive ion etching (DRIE) of the bulk silicon. The movement of the structures is in the plane of the wafer. Therefore, electrode pads that connect CMOS and the MEMS externally are fabricated using bulk (low doping) silicon which has high resistance. This must be considered before choosing this process for your CMOS applications
Deadlines for the next run:
Process Will Begin at Michigan: January 31, 2006
Chips Returned to Customers: March 31, 2006

Attachments

sog1.png (79.3 KB, image/png): Description of SOG-MEMS device
sog2.png (61.5 KB, image/png): SEM image of SOG-MEMS devices
sog3.png (591.0 KB, image/png): 3D view of a SOF-MEMS device
sog_lr.jpg (165.7 KB, image/jpeg): SOG-MEMS process flow
SOG_design_rules_v2_03-19-07.pdf (799.2 KB, application/pdf): Revised design rules