Silicon dioxide plasma etch (anisotropic): View

on front Silicon dioxide plasma etch (anisotropic)

on front

1 Resist hardening

on front

2 Silicon dioxide plasma etch (anisotropic)

Material	silicon dioxide

on front

3 Polymer clean-up

Material	polymer (category)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 2 µm

Etch rate

0.033 µm/min

Material

silicon dioxide

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 4, silicon dioxide: 1

Wafer size

Comments:

Polymer clean-up is necessary after this plasma etch.