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HF release & Supercritical dry: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

HF release & Supercritical dry
Materialsilicon dioxide
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 1 .. 10 µm
1 .. 10 µm
Perform hf dip
Perform hf dip*
yes no
Sides processed both
Wafer size
Wafer size