HF release etch: View

HF release etch

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 10 µm

Batch size

Etch rate

2.3 µm/min

Etchant

Solutions and their concentrations.

HF [49%]

Material

silicon dioxide

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

phosphosilicate glass: 0.6, silicon dioxide: 1

Sides processed

both

Temperature

23 °C

Wafer size

Equipment

Wetbench

bkla

Equipment characteristics:

Piece dimension

Range of wafer piece dimensions the equipment can accept

0 .. 4 inch

Piece geometry

Geometry of wafer pieces the equipment can accept

triangular shard, other, rectangular, irregular, circular

Piece thickness

Range of wafer piece thickness the equipment can accept

100 .. 1000 µm

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer holder

Device that holds the wafers during processing.

teflon carrier

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

100 .. 1000 µm

Comments:

Used to etch sacrificial
layers of silicon dioxide and PSG.