HF Vapor Phase Etch: View

HF Vapor Phase Etch

Process characteristics:

Time for Clear

Typical Etch Rate 67nm/min

unconstrained

Time for Undercut

Typical Lateral Etch Rate 267 nm/min

unconstrained

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 3, 150 mm: 3

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 800 µm