Photoresist strip (O2 plasma) |
|---|
|
| Etch rate |
1 .. 3 µm/min |
|---|
| Gas |
O2, NF3, CF4, Nitrogen |
|---|
| Materials |
photoresist on silicon nitride, photoresist on silicon dioxide, photoresist on silicon |
|---|
| Thickness |
0 .. 10 µm |
|---|
| Wafer size |
|
|---|
| Equipment |
Ulvac Enviro |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
MEMS and Nanotechnology Exchange