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4X Projection photolithography: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
4X Projection photolithography
on front
1 Photoresist coat (AZ HiR 1075)
2 4X align and exposure
3 Photoresist develop
on front
4 SEM analysis
Process characteristics:
Perform edge bead removal
Perform edge bead removal*
yes no
Perform hardbake
Perform hardbake*
Perform sem sample analysis
Two measurement per wafer.
This is an 30mins SEM inspection step.
Perform sem sample analysis*
yes no
Two measurement per wafer. This is an 30mins SEM inspection step.
Resist thickness
Resist thickness*
Alignment tolerance
Registration of CAD data to features on wafer
 0.15 µm
Alignment type
Method used to align materials to be bonded.
 front-front
Batch size 1
Magnification 1
Min feature size 0.5 µm
Wafer size
Wafer size
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